tclt101. series www.vishay.com vishay semiconductors alternative device available rev. 1.7, 08-jan-14 1 document number: 81256 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 optocoupler, phototransistor output, sop-6l4, 110 c rated, long mini-flat package description the tclt101. series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead sop-6l package. applications ? switchmode power supplies ? computer periph eral interface ? microprocessor system interface features ? smd low profile 4 lead package ? high isolation 5000 v rms ? ctr flexibility availabl e see order information ? special construction ? extra low coupling capacitance ? connected base ? dc input with transistor output ? temperature range -55 c to +110 c ? creepage distance > 8 mm ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 agency approvals ? ul1577, file no. e76222 ? cul - file no. e76222, equivalent to csa bulletin 5a ? din en 60747-5-5, available with option 1 ? fimko: en 60950 ce ac 12 43 17295-5 ordering information tclt101# part number agency certified/package ctr (%) 5 ma 10 ma 5 ma ul, cul, vde, fimko 50 to 600 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400 sop-6l4 tclt1010 tclt1012 tclt1013 tclt1014 tc lt1015 tclt1016 tclt1017 tclt1018 tclt1019 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma forward surge current t p 10 s i fsm 1.5 a power dissi pation p diss 100 mw junction temperature t j 125 c output collector emitter voltage v ceo 70 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissi pation p diss 150 mw junction temperature t j 125 c coupler isolation test voltage (rms) v iso 5000 v rms 10.2 mm s op-6l4
tclt101. series www.vishay.com vishay semiconductors alternative device available rev. 1.7, 08-jan-14 2 document number: 81256 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? stresses in excess of the absolu te maximum ratings can ca use permanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those give n in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of th e time can adversely affect reliability. (1) wave soldering three cycles are allowed. also refer to assembly instruction ( www.vishay.com/doc?80054 ). fig. 1 - total power dissipation vs. ambient temperature note ? minimum and maximum values are testing requirements. typical values are characteristics of the device and are the result of en gineering evaluation. typical values are for information only and are not part of the testing requirements. total power dissipation p tot 250 mw operating ambient temperature range t amb -55 to +110 c storage temperature range t stg -55 to +125 c soldering temperature (1) t sld 260 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit input forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0 v, f = 1 mhz c j 50 pf output collector emitter voltage i c = 1 ma v ceo 70 v emitter collector voltage i e = 100 a v eco 7v collector emitter leakage current v ce = 20 v, i f = 0 a i ceo 10 100 na coupler collector emitter sa turation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 f c 110 khz coupling capaci tance f = 1 mhz c k 0.3 pf absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit 0 50 100 150 200 250 300 0 40 80 120 p tot - total power di ss ipation (mw) t amb - ambient temperature ( c) coupled device phototran s i s tor ir-diode
tclt101. series www.vishay.com vishay semiconductors alternative device available rev. 1.7, 08-jan-14 3 document number: 81256 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? according to din en 60747-5-2 (vde 0884) (see figure 2). this optocoupler is suitable for safe electr ical isolation only withi n the safety ratings. compliance with the safety ratings shall be ensured by means of suitable protective circuits. fig. 2 - derating diagram fig. 3 - test pulse diagram for sample test according to din en 60747-5-2 (vde 0884); iec 60747-5-5 current transfer ratio (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit i c /i f v ce = 5 v, i f = 5 ma tclt1010 ctr 50 600 % v ce = 5 v, i f = 10 ma tclt1012 ctr 63 125 % tclt1013 ctr 100 200 % tclt1014 ctr 160 320 % v ce = 5 v, i f = 1 ma tclt1012 ctr 22 45 % tclt1013 ctr 34 70 % tclt1014 ctr 56 100 % v ce = 5 v, i f = 5 ma TCLT1015 ctr 50 150 % tclt1016 ctr 100 300 % tclt1017 ctr 80 160 % tclt1018 ctr 130 260 % tclt1019 ctr 200 400 % safety and insulation rated parameters parameter test condition symbol min. typ. max. unit partial discharge test voltage - routine test 100 %, t test = 1 s v pd 1.6 kv partial discharge test voltage - lot test (sample test) t tr = 60 s, t test = 10 s, (see figure 2) v iotm 8kv v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 v io = 500 v, t amb = 150 c (construction test only) r io 10 9 forward current i si 130 ma power dissi pation p so 265 mw rated impulse voltage v iotm 8kv safety temperature t si 150 c clearance distance 8.0 mm creepage distance 8.0 mm insulation distance (internal) 0.40 mm 0 25 50 75 125 0 50 100 150 200 300 t si - safety temperature (c) 150 94 9182-2 100 250 ir-diode i si (ma) phototransistor p so (mw) t 13930 t 1 , t 2 = 1 s to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s v iotm v pd v iowm v iorm 0 t 1 t test t tr = 60 s t stres t 3 t 4 t 2
tclt101. series www.vishay.com vishay semiconductors alternative device available rev. 1.7, 08-jan-14 4 document number: 81256 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 4 - test circuit, non-saturated operation fig. 5 - test circui t, saturated operation fig. 6 - switching times switching characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit delay time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t d 3s rise time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t r 3s fall time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t f 4.7 s storage time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t s 0.3 s turn-on time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t on 6s turn-off time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t off 5s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k , (see figure 4) t on 9s turn-off time v s = 5 v, i f = 10 ma, r l = 1 k , (see figure 4) t off 10 s channel i channel ii 95 10804 r g = 50 t p t p = 50 s t = 0.01 + 5 v i f 0 50 100 i f i c = 2 ma; adjusted through input amplitude oscilloscope r l = 1 m c l = 20 pf channel i channel ii 95 10843 r g = 50 t p t p = 50 s t = 0.01 + 5 v i c i f 0 50 1 k i f = 10 ma oscilloscope r l c l 20 pf 1 m t p t t 0 0 10 % 90 % 100 % t r t d t on t s t f t off i f i c t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time 96 11698
tclt101. series www.vishay.com vishay semiconductors alternative device available rev. 1.7, 08-jan-14 5 document number: 81256 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 7 - forward voltage vs. forward current fig. 8 - collector current vs. collector emitter voltage (ns) fig. 9 - leakage current vs. ambient temperature fig. 10 - collector current vs. collector emitter voltage (saturated) fig. 11 - normalized current transfer ratio (non-saturated) vs. ambient temperature fig. 12 - normalized current transfer ratio (saturated) vs. ambient temperature 0.1 1 10 100 0.6 0.8 1.0 1.2 1.4 1.6 i f - forward current (ma) v f - forward voltage (v) t amb = 110 c t amb = 75 c t amb = 25 c t amb = 0 c t amb = - 55 c 0 5 10 15 20 25 30 35 40 45 50 55 0 1 2 3 4 5 6 7 8 9 10 i c - collector current (ma) v ce - collector emitter voltage (non- s at) (v) i f = 30 ma i f = 35 ma i f = 1 ma i f = 20 ma i f = 15 ma i f = 10 ma i f = 5 ma i f = 25 ma 0.001 0.01 0.1 1 10 100 1000 10 000 i ce0 - leakage current (na) t amb - ambient temperature ( c) i f = 0 ma v ce = 40 v v ce = 24 v v ce = 12 v -60 -40 -20 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 00.10.20.30.4 i c - collector current (ma) v ce - collector emitter voltage ( s at) (v) i f = 1 ma i f = 10 ma i f = 5 ma i f = 2 ma 0 0.2 0.4 0.6 0.8 1.0 1.2 n ctr - normalized ctr (non- s aturated) t amb - ambient temperature ( c) normalized to ctr value: i f = 10 ma, v ce = 5 v, t amb = 25 c -60 -40 -20 0 20 40 60 80 100 120 0 0.2 0.4 0.6 0.8 1.0 1.2 n ctr - normalized ctr ( s at) t amb - ambient temperature ( c) normalized to ctr value: i f = 10 ma, v ce = 5 v, t amb = 25 c -60 -40 -20 0 20 40 60 80 100 120
tclt101. series www.vishay.com vishay semiconductors alternative device available rev. 1.7, 08-jan-14 6 document number: 81256 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - normalized ctr (non-saturated) vs. forward current fig. 14 - normalized ctr (saturated) vs. forward current fig. 15 - ctr frequency vs. phase angle fig. 16 - ctr frequenc y vs. collector current fig. 17 - switching time vs. load resistance fig. 18 - collector emitter voltage vs. ambient temperature (saturated) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 n ctr - normalized ctr (n s ) i f - forward current (ma) normalized to: i f = 5 a, v ce = 5 v, t amb = 25 c t amb = 0 c t amb = 100 c t amb = 75 c t amb = - 55 c t amb = 25 c 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 n ctr - normalized ctr ( s at) i f - forward current (ma) v ce = 0.4 v normalized to: i f = 5 ma, v ce = 5 v, t amb = 25 c t amb = 0 c t amb = 75 c t amb = - 55 c t amb = 25 c t amb = 100 c -160 -140 -120 -100 -80 -60 -40 -20 0 1 10 100 1000 pha s e angle (deg) f - cut-off fre q uency (khz) v ce = 5 v r l = 100 r l = 1000 1 10 100 1000 0.1 1 10 100 f ctr (khz) i c (ma) v cc = 5 v 0.1 1 10 100 1000 0 5 10 15 20 t on , t off s witching time ( s ) r l - load re s i s tance (k ) t off ( s ) t on ( s ) v ce = 5 v, i f = 5 ma 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 -60 -40 -20 0 20 40 60 80 100 120 v ce s at - collector emitter voltage (v) t amb - ambient temperature ( c) i c = 1 ma i c = 2 ma i c = 5 ma i f = 10 ma
tclt101. series www.vishay.com vishay semiconductors alternative device available rev. 1.7, 08-jan-14 7 document number: 81256 for technical questions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters package marking (example of tclt1013) 22533 7.50 0.20 0.10 0.10 0.70 + 0.30 - 0.40 technical drawing s according to din s pecification s 8.20 10.80 po ss ible footprint 2.54 0.90 4.10 max. 3.80 2.00 2.30 max. 2.54 nom. pin no. 1 identification 1 2 4 3 0.45 0.1 + 0.30 - 0.40 10.20 0.20 + 0.10 - 0.05 tclt1013 v yww 68
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